 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * 900 MHz Performance: 1.1 dB NF, 14.5 dB G A * Characterized for End-ofLife Battery Use (2.7 V) * SOT-363 (SC-70) Plastic Package * Tape-and-Reel Packaging Option Available [1] Description The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard's 10 GHz f t , 30 GHz fmax SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking 1 B1 2 E1 3 C2 4 B2 5 E2 6 C1 I I 4-63 5965-8921E AT-32063 Absolute Maximum Ratings[1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum 1.5 11 5.5 40 150 150 -65 to 150 Thermal Resistance[2]: jc = 370C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25C. 3. Derate at 2.7 mW/C for TC > 94.5C. 4. 150 mW per device. Electrical Specifications, TA = 25C Symbol NF GA hFE ICBO IEBO Parameters and Test Conditions Noise Figure; VCE = 2.7 V, IC = 5 mA Associated Gain; VCE = 2.7 V, IC = 5 mA Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA Collector Cutoff Current; VCB = 3 V Noise Figure; VEB = 1 V f = 0.9 GHz f = 0.9 GHz Units dB dB -- A A 50 Min. Typ. Max. 1.1[2] 12.5[2] 14.5[2] 270 0.2 1.5 1.4[2] Notes: 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB. 50 W = 10 L = 450 TEST CIRCUIT BOARD MATERIAL = 0.047 GETEK ( = 4.3) DIMENSIONS IN MILS NOT TO SCALE W = 10 L = 100 50 W = 20 L = 60 Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 4-64 AT-32063 Characterization Information, TA = 25C Symbol P1 dB G1 dB IP3 Parameters and Test Conditions Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz f = 0.9 GHz f = 0.9 GHz Units dBm dB dBm Typ. 12 16 24 Typical Performance, TA = 25C 2.00 20.0 15 NOISE FIGURE (dB) 1.50 Ga (dB) 15.0 P1 dB (dBm) 14 13 1.00 10.0 12 0.50 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA 1.8 FREQUENCY (GHz) 2.4 5.0 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA 1.8 FREQUENCY (GHz) 2.4 11 0 0.9 0 0.9 10 0.9 1.8 FREQUENCY (GHz) 2.4 Figure 2. Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V. Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. 25 Figure 4. Power at 1 dB Gain Compression vs. Frequency at VCE=2.7V and IC = 20 mA. 18 15 12 IP3 (dBm) 20 G1 dB (dBm) 15 9 6 3 0 0.9 10 2 mA 5 mA 10 mA 20 mA 0 0.5 1.0 1.5 2.0 2.5 5 0 1.8 FREQUENCY (GHz) 2.4 FREQUENCY (GHz) Figure 5. 1 dB Compressed Gain vs. Frequency at VCE = 2.7 V and IC=20mA. Figure 6. Third Order Intercept vs. Frequency and Bias at VCE = 2.7 V, with Optimal Tuning. 4-65 AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 1 V, IC = 1 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.98 0.86 0.72 0.69 0.58 0.52 0.49 0.45 0.41 0.42 0.47 -11 -50 -82 -88 -119 -134 -145 -165 166 124 93 11.36 10.14 8.39 7.87 5.87 4.83 4.3 3.16 1.84 0.17 -1.15 3.7 3.21 2.63 2.48 1.97 1.74 1.64 1.44 1.24 1.02 0.88 171 138 113 108 85 74 67 55 39 16 -2 -34.77 -22.02 -18.97 -18.61 -17.8 -17.72 -17.69 -17.68 -16.99 -13.67 -9.84 0.02 0.08 0.11 0.12 0.13 0.13 0.13 0.13 0.14 0.21 0.32 25 83 59 43 41 31 28 28 30 37 45 38 0.99 0.91 0.82 0.8 0.73 0.7 0.68 0.67 0.64 0.6 0.54 -4 -20 -31 -32 -41 -45 -48 -54 -63 -81 -107 AT-32063 Typical Noise Parameters Common Emitter, Zo = 50 , VCE = 1 V, IC = 1 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- GAIN (dB) 20 MSG 15 10 5 S21 0 -5 0.1 MAG MSG 0.9 1.8 2.4 0.71 1.37 1.80 10.4 8.3 7.2 0.76 0.60 0.50 50 112 155 0.44 0.24 0.10 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 7. Gain vs. Frequency at VCE=1V, IC = 1mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 2 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.77 0.59 0.55 0.42 0.37 0.34 0.29 0.26 0.28 0.33 -12 -55 -87 -93 -121 -135 -145 -164 167 124 94 16.46 14.73 12.37 11.74 9.26 8.01 7.35 6.05 4.54 2.73 1.36 6.66 5.45 4.15 3.86 2.90 2.52 2.33 2.01 1.69 1.37 1.17 169 132 107 103 83 73 67 56 41 20 1 -37.32 -25.13 -22.42 -22.07 -20.79 -20.13 -19.67 -18.68 -16.95 -13.75 -10.70 0.014 0.055 0.076 0.079 0.091 0.099 0.104 0.116 0.142 0.205 0.292 30 25 82 59 48 47 44 45 46 48 50 48 41 0.98 0.87 0.76 0.74 0.69 0.67 0.66 0.65 0.64 0.61 0.57 -5 -21 -29 -30 -36 -39 -41 -46 -53 -68 -89 Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 2 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- GAIN (dB) AT-32063 Typical Noise Parameters 20 15 10 5 0 0.1 MSG MAG MSG S21 0.9 1.8 2.4 0.78 1.25 1.57 14.3 10.7 9.1 0.65 0.45 0.35 50 105 145 0.31 0.20 0.13 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) 4-66 Figure 8. Gain vs. Frequency at VCE=2.7 V, IC = 2mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 5 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.87 0.52 0.34 0.31 0.22 0.19 0.17 0.14 0.12 0.16 0.22 -19 -72 -101 -106 -129 -141 -150 -169 160 117 93 23.36 19.21 15.40 14.60 11.54 10.12 9.33 7.95 6.34 4.46 3.15 14.72 9.13 5.89 5.37 3.77 3.21 2.93 2.50 2.08 1.67 1.44 162 116 94 90 74 66 61 52 39 20 2 -37.77 -27.03 -24.01 -23.41 -20.85 -19.52 -18.72 -17.22 -15.25 -12.40 -10.03 0.013 0.045 0.063 0.067 0.091 0.106 0.116 0.138 0.173 0.240 0.315 35 30 80 60 58 58 58 58 57 56 52 44 33 0.96 0.72 0.62 0.61 0.58 0.57 0.57 0.57 0.56 0.53 0.48 -9 -25 -28 -29 -33 -36 -38 -42 -49 -63 -82 AT-32063 Typical Noise Parameters GAIN (dB) 25 20 15 10 Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- MSG MAG S21 MSG 0.9 1.8 2.4 0.98 1.50 1.77 16.4 11.6 10.1 0.45 0.29 0.33 51 100 153 0.23 0.16 0.11 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 9. Gain vs. Frequency at VCE=2.7 V, IC = 5mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 20 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.55 0.20 0.13 0.13 0.10 0.09 0.09 0.08 0.10 0.15 0.21 -41 -107 -137 -141 -164 -178 172 152 127 101 86 30.48 21.24 16.48 15.60 12.26 10.78 9.93 8.52 6.85 4.92 3.59 33.40 11.53 6.66 6.02 4.10 3.46 3.14 2.67 2.20 1.76 1.51 143 97 82 79 67 60 56 48 36 18 0 -39.81 -29.18 -24.63 -23.79 -20.43 -18.88 -17.98 -16.39 -14.4 -11.68 -9.52 0.010 0.035 0.059 0.065 0.095 0.114 0.126 0.151 0.191 0.261 0.334 40 35 74 72 72 71 68 66 64 60 54 43 31 0.83 0.56 0.53 0.53 0.52 0.53 0.53 0.53 0.52 0.48 0.44 -15 -20 -22 -22 -27 -31 -34 -39 -47 -61 -79 AT-32063 Typical Noise Parameters GAIN (dB) 30 25 20 MSG Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 20 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- MAG 15 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 MSG 0.9 1.8 2.4 1.51 1.78 1.96 17.9 12.7 10.6 0.13 0.20 0.28 88 178 235 0.20 0.13 0.08 FREQUENCY (GHz) 4-67 Figure 10. Gain vs. Frequency at VCE=2.7 V, IC = 20mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 5 V, IC = 2 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.78 0.59 0.56 0.42 0.36 0.33 0.28 0.24 0.25 0.31 -12 -53 -84 -90 -117 -131 -140 -159 171 126 95 16.50 14.84 12.5 11.92 9.46 8.21 7.55 6.24 4.72 2.88 1.49 6.69 5.52 4.23 3.94 2.97 2.57 2.38 2.05 1.72 1.39 1.19 169 133 108 104 84 74 68 57 43 21 3 -38.44 -26.20 -23.4 -23.04 -21.71 -21.04 -20.56 -19.54 -17.76 -14.47 -11.32 0.012 0.049 0.068 0.070 0.082 0.089 0.094 0.105 0.129 0.189 0.272 30 25 82 60 50 49 46 47 48 50 53 52 45 0.98 0.88 0.79 0.77 0.72 0.70 0.69 0.69 0.68 0.66 0.63 -5 -19 -27 -28 -33 -36 -39 -43 -50 -64 -83 AT-32063 Typical Noise Parameters GAIN (dB) Common Emitter, Zo = 50 , VCE = 5 V, IC = 2 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- 20 15 10 MSG MAG MSG 0.9 1.8 2.4 0.75 1.26 1.60 13.7 10.8 9.6 0.74 0.55 0.45 47 101 139 0.37 0.22 0.13 S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 11. Gain vs. Frequency at VCE=5 V, IC = 2mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 5 V, IC = 20 mA Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.61 0.22 0.13 0.12 0.08 0.06 0.06 0.04 0.05 0.10 0.16 -36 -91 -115 -118 -137 -148 -159 175 131 99 86 30.56 21.75 17.02 16.14 12.80 11.31 10.46 9.02 7.35 5.39 4.05 33.74 12.23 7.10 6.41 4.36 3.68 3.33 2.83 2.33 1.86 1.6 145 98 83 81 68 62 58 50 39 21 3 -40.46 -29.90 -25.40 -24.56 -21.23 -19.69 -18.79 -17.21 -15.22 -12.48 -10.27 0.01 0.03 0.05 0.06 0.09 0.10 0.12 0.14 0.17 0.24 0.31 40 35 75 72 72 71 69 66 65 61 56 46 34 0.86 0.6 0.57 0.57 0.57 0.57 0.57 0.57 0.56 0.54 0.50 -14 -19 -21 -21 -26 -30 -32 -37 -45 -58 -75 AT-32063 Typical Noise Parameters GAIN (dB) 30 25 20 MSG Common Emitter, Zo = 50 , VCE = 5 V, IC = 20 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn -- MAG 15 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 MSG 0.9 1.8 2.4 1.50 1.78 1.96 18.6 13.3 11.3 0.18 0.19 0.24 74 147 198 0.20 0.16 0.14 FREQUENCY (GHz) 4-68 Figure 12. Gain vs. Frequency at VCE=5 V, IC = 20mA. Package Dimensions Outline 63 (SOT-363/SC-70) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.425 (0.017) TYP. 0.30 REF. 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 10 0.30 (0.012) 0.10 (0.004) 0.20 (0.008) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) Part Number Ordering Information Part Number AT-32063-TR1 AT-32063-BLK No. of Devices 3000 100 Container 7" Reel antistatic bag 4-69 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm II II II II Tape Dimensions For Outline 63 P P0 D P2 E F W D1 t1 (CARRIER TAPE THICKNESS) 8 MAX. K0 5 MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2 SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 3.50 0.05 2.00 0.05 SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.138 0.002 0.079 0.002 PERFORATION CARRIER TAPE DISTANCE 4-70 |
Price & Availability of AT-32063
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |